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Investigation of plasmonic resonances in the two-dimensional electron gas of an InGaAs/InP high electron mobility transistor

Identifieur interne : 002B16 ( Main/Repository ); précédent : 002B15; suivant : 002B17

Investigation of plasmonic resonances in the two-dimensional electron gas of an InGaAs/InP high electron mobility transistor

Auteurs : RBID : Pascal:11-0452828

Descripteurs français

Pascal (Inist)
- Domaine fréquence THz, Mobilité électron, Composé ternaire, Gallium Arséniure, Indium Arséniure, Composé binaire, Semiconducteur III-V, Indium Phosphure, InGaAs, InP, As Ga In, In P, InGaAs/InP, 0130C, 0757.

English descriptors

KwdEn :
- Binary compounds, Electron mobility, Gallium Arsenides, III-V semiconductors, Indium Arsenides, Indium Phosphides, THz range, Ternary compounds.

Abstract

The observation of THz regime transmission resonances in an InGaAs/InP high electron mobility transistor (HEMT) can be attributed to excitation of plasmons in its two-dimensional electron gas (2DEG). Properties of grating-based, gate-voltage tunable resonances are shown to be adequately modeled using commercial finite element method (FEM) software when the HEMT layer structure, gate geometry and sheet charge concentration are taken into account. The FEM results are shown to produce results consistent with standard analytical theories in the 10-100 cm^-1 wavenumber range. An original analytic formula presented here describes how the plasmonic resonance may change in the presence of a virtual gate, or region of relatively high free charge carriers that lies in the HEMT between the physical grating gate and the 2DEG. The virtual gate and corresponding analytic formulation are able to account for the red-shifting experimentally observed in plasmonic resonances. The calculation methods demonstrated here have the potential to greatly aid in the design of future detection devices that require specifically tuned plasmonic modes in the 2DEG of a HEMT, as well as giving new insights to aid in the development of more complete analytic theories.

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Pascal:11-0452828

Le document en format XML

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<author><name sortKey="Cleary, Justin W" uniqKey="Cleary J">Justin W. Cleary</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Solid State Scientific Corporation</s1>
<s2>Hollis, NH 03049</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Solid State Scientific Corporation</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Peale, Robert E" uniqKey="Peale R">Robert E. Peale</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, University of Central Florida</s1>
<s2>Orlando, FL 32816</s2>
<s3>USA</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Orlando, FL 32816</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Saxena, Himanshu" uniqKey="Saxena H">Himanshu Saxena</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Zyberwear, Inc.</s1>
<s2>Ocoee, FL 34761</s2>
<s3>USA</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Ocoee, FL 34761</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Buchwald, Walter R" uniqKey="Buchwald W">Walter R. Buchwald</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Air Force Research Laboratory / Sensors Directorate, Hanscom Air Force Base</s1>
<s2>MA 01731</s2>
<s3>USA</s3>
<sZ>4 aut.</sZ>
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<country>États-Unis</country>
<placeName><region type="state">Massachusetts</region>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compounds</term>
<term>Electron mobility</term>
<term>Gallium Arsenides</term>
<term>III-V semiconductors</term>
<term>Indium Arsenides</term>
<term>Indium Phosphides</term>
<term>THz range</term>
<term>Ternary compounds</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Domaine fréquence THz</term>
<term>Mobilité électron</term>
<term>Composé ternaire</term>
<term>Gallium Arséniure</term>
<term>Indium Arséniure</term>
<term>Composé binaire</term>
<term>Semiconducteur III-V</term>
<term>Indium Phosphure</term>
<term>InGaAs</term>
<term>InP</term>
<term>As Ga In</term>
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<term>InGaAs/InP</term>
<term>0130C</term>
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<front><div type="abstract" xml:lang="en">The observation of THz regime transmission resonances in an InGaAs/InP high electron mobility transistor (HEMT) can be attributed to excitation of plasmons in its two-dimensional electron gas (2DEG). Properties of grating-based, gate-voltage tunable resonances are shown to be adequately modeled using commercial finite element method (FEM) software when the HEMT layer structure, gate geometry and sheet charge concentration are taken into account. The FEM results are shown to produce results consistent with standard analytical theories in the 10-100 cm<sup>-1</sup>
 wavenumber range. An original analytic formula presented here describes how the plasmonic resonance may change in the presence of a virtual gate, or region of relatively high free charge carriers that lies in the HEMT between the physical grating gate and the 2DEG. The virtual gate and corresponding analytic formulation are able to account for the red-shifting experimentally observed in plasmonic resonances. The calculation methods demonstrated here have the potential to greatly aid in the design of future detection devices that require specifically tuned plasmonic modes in the 2DEG of a HEMT, as well as giving new insights to aid in the development of more complete analytic theories.</div>
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<fA14 i1="03"><s1>Zyberwear, Inc.</s1>
<s2>Ocoee, FL 34761</s2>
<s3>USA</s3>
<sZ>3 aut.</sZ>
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<fA14 i1="04"><s1>Air Force Research Laboratory / Sensors Directorate, Hanscom Air Force Base</s1>
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<fC01 i1="01" l="ENG"><s0>The observation of THz regime transmission resonances in an InGaAs/InP high electron mobility transistor (HEMT) can be attributed to excitation of plasmons in its two-dimensional electron gas (2DEG). Properties of grating-based, gate-voltage tunable resonances are shown to be adequately modeled using commercial finite element method (FEM) software when the HEMT layer structure, gate geometry and sheet charge concentration are taken into account. The FEM results are shown to produce results consistent with standard analytical theories in the 10-100 cm<sup>-1</sup>
 wavenumber range. An original analytic formula presented here describes how the plasmonic resonance may change in the presence of a virtual gate, or region of relatively high free charge carriers that lies in the HEMT between the physical grating gate and the 2DEG. The virtual gate and corresponding analytic formulation are able to account for the red-shifting experimentally observed in plasmonic resonances. The calculation methods demonstrated here have the potential to greatly aid in the design of future detection devices that require specifically tuned plasmonic modes in the 2DEG of a HEMT, as well as giving new insights to aid in the development of more complete analytic theories.</s0>
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<s5>52</s5>
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<s5>75</s5>
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<fC03 i1="10" i2="3" l="FRE"><s0>InP</s0>
<s4>INC</s4>
<s5>76</s5>
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<fC03 i1="11" i2="3" l="FRE"><s0>As Ga In</s0>
<s4>INC</s4>
<s5>77</s5>
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<fC03 i1="12" i2="3" l="FRE"><s0>In P</s0>
<s4>INC</s4>
<s5>78</s5>
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<s5>84</s5>
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<s4>INC</s4>
<s5>85</s5>
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Investigation of plasmonic resonances in the two-dimensional electron gas of an InGaAs/InP high electron mobility transistor

Investigation of plasmonic resonances in the two-dimensional electron gas of an InGaAs/InP high electron mobility transistor

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri